sot-523 unit: mm 0.2 +0.05 -0.05 1.0 +0.1 -0.1 1.6 +0.1 -0.1 1 . 6 + 0 . 1 5 - 0 . 1 5 0.3 +0.25 -0.05 0.5 +0.1 -0.1 0 . 7 5 + 0 . 0 5 - 0 . 0 5 0 . 8 + 0 . 0 5 - 0 . 0 5 0.1 +0.01 -0.01 0 . 8 + 0 . 1 - 0 . 1 0 . 3 5 0 . 5 5 1 2 3 1. base 2. emitter 3. collecter mm bt3906 t features ultra-sm all s urface mount pac kage com plem entary npn type available(m mbt3904t) absolute maxim um rating s t a = 2 5 paramet er sym bol rating unit collector- base v oltage v cbo -40 v collector - em itt er voltage v ceo -40 v em itt er - base v oltage v ebo -5 v collector curr ent- continuo us i c -0.2 a pow er diss ipation p d 150 m w thermal resi st ance, j unction t o am bient (note 1) r ja 833 /w junct ion and storage temperature t j , t stg -55 to 150 notes: 1. device m ounted on fr-4 pcb. ele ctric al characteristics t a = 2 5 paramet er sym bol test c onditons min typ ma x unit collector - base breakdow n voltage v (br)cbo ic = -10 a i e =0 -40 v collector - em itt er bre akdow n voltage v (br)ceo ic = -1 m a i b =0 -40 v em itt er- base breakdow n voltage v (br)ebo i e = -10 a i c =0 -5 v collector cut-off c urr ent i cbo v cb =-30 v,i e =0 0.1 a em itt er cut-off current i ebo v eb =-5v,i c =0 0.1 a v ce = -1v, i c = -10ma 100 300 v ce = -1v, i c = -50ma 60 collector- emi tter s aturation vo ltage v ce(sat) i c =-50 m a, i b = -5m a -0.4 v base - em itt er saturation voltage v be(sat) i c =-50 m a, i b = -5m a -0.95 v delay ti m e t d v cc =-3.0v,v be =0.5v 35 rise ti m e t r i c =-10 m a,i b1 =-1.0ma 35 storage tim e t s v cc =-3.0v,i c =-10 m a 225 fall t im e t f i b1 =i b2 =-1.0ma 75 transition frequency f t v ce = -20v, i c = -10ma , f =100m hz 250 mh z dc curre nt gain ns ns h fe mark ing mar king 3n sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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